UMD6N dual npn+pnp digital transistors (built-in resistors) elektronische bauelemente 30-jun-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? dta143t(pnp) and dtc143t(npn) transistors are built-in a package. ? transistor elements are independent, eliminating interference. ? mounting cost and area can be cut in half. equivalent circuit marking d6 absolute maximum ratings at ta = 25 c parameter symbol value unit collector-base voltage v (br)cbo 50 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 5 v collector current i c 100 ma collector power dissipation p c 150 mw junction & storage temperature t j , t stg 150, -55 ~ 150 absolute maximum ratings and electr ical characteristics at ta = 25 c parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c = 50 ? a collector-emitter breakdown voltage v (br)ceo 50 - - i c = 1ma emitter-base breakdown voltage v (br)ebo 5 - - v i e = 50 ? a collector cut-off current i cbo - - 0.5 ? a v cb = 50v emitter cut-off current i ebo - - 0.5 ? a v eb = 4v collector-emitter saturation voltage v ce(sat) - - 0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio h fe 100 - 600 v ce = 5v, i c = 1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t - 250 - mhz v ce = 10v, i e = -5ma, f=100mhz ? ? ref. millimete r ref. millimete r min. max. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 sot-363 b l f h c j d g k a e
UMD6N dual npn+pnp digital transistors (built-in resistors) elektronische bauelemente 30-jun-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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